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主        旨 2017功率半導體材料(氮化鎵&碳化矽)應用元件國際論壇
公告日期 2017/9/11
公告單位 台經院
公告內容


2017功率半導體材料(氮化鎵&碳化矽)應用元件國際論壇
2017 Symposium on High Power Semiconductor Materials (GaN & SiC) and Devices
邀 請 函
Invitation

次世代電力電子製造技術為全球製造業創新研究發展重點之一,矽基元件是過去幾十年來世界經濟發展的重要推手,但由於矽(Si)已接近其理論上的性能極限,寬能隙(Wide Bandgap; WBG)半導體材料與電力電子元件日趨重要,將成為次世代功率產品及應用重要的技術平台。
有鑑於我國學研界投入寬能隙與化合物半導體材料等功率模組相關研究多年,透過國際技術交流將有助於我國功率電子相關產業技術精進與發展,因此本次研討會議特邀請國內外功率半導體產學機構,包括GaNSystems、University of Texas at Austin、長庚大學、穩懋半導體、台達電子等專家進行專題演講,與國內各界分享交流,在此,誠摯邀請您撥冗參加此盛會,並藉此機會與國內相關產業先進作技術及經驗交流,期能促成上下游廠商的合作結盟,紮根台灣,跨足國際!

The power electronics semiconductor manufacturing technology of next generation has been the global manufacturing innovation researching and developing emphasis. Si-based components are important for global economic development in last few decades. However, the performance of Si is almost approaching its theoretical limit; meanwhile, Wide Bandgap semiconductor components and power electronics components become more important, and will be the significant technological platform for power products and applications of next generation.
Taiwan has been engaging in the development of power modules in semiconductor component such as Wide Bandgap and compounds for years from academic and research areas, founding a platform that provides technical information exchange and collaboration for international communities is important and necessary for the development and exceling of the power modules technology in related industries. We are honored to invite domestic and foreign experts in the industry and academia of power semiconductor, including GaNSystems, University of Texas at Austin, Chang Gung University, WIN Semiconductors Corp, and Delta Electronics, Inc to deliver lectures and share information.
Sincerely invite you to participate this symposium, we aim to provide a platform where experiences exchanges and facilitate the collaboration among supply chain manufacturers. This symposium is expected to be a momentum for high power semiconductor materials and modules technology development in Taiwan, and international.

一、 論壇時間Symposium Date:
2017年10月19日 上午9:30至下午4:40 (Oct.19rd. 2017,9:30am∼4:40pm)
二、 活動報名時間Registration Period:
即日起至2017年10月2日下午五點止(額滿為止) (From now until Oct.2nd .2017 5:00pm, until Full)
三、 議程Agenda:

Thursday, October 19, 2017

9:00-9:20 Registration
9:20-9:30 Opening Remarks
9:30-10:20 WBG Power Devices and Potential Impact Areas University of Texas at Austin.
QIN HUANG Dula D. Cockrell Centennial Chair in Engineering
10:20-10:40 Coffee Break
10:40-11:30 Will 5G Communication System Bring the Opportunity to GaN on Si Electronics Devices? Chang Gung University Hsien-Chin Chiu Electronic Engineering Dept. Professor
11:30-11:50 Panel Discussion
11:50-13:30 Lunch
13:30-14:20 topic GaNSystems Stephen Coates VP Operations
14:20-15:10 WBG Device Application for E-Mobility Delta Electronics, Inc.Yu- Ming Chang General Manager
15:10-15:30 Coffee Break
15:30-16:20 Foundry Service of GaN on SiC HEMT in WIN Semiconductor WIN Semiconductors Corp
Wen-Kai Wang  Director  GaAs pHEMT & GaN Development Div
16:20-16:40 Panel Discussion

四、 線上報名網址Registration Website:https://goo.gl/JXZVBP
五、 論壇地點Symposium Venue:
台大集思會議中心 蘇格拉底廳 (GIS NTU Convention Center, Taipei, Taiwan)
台北市羅斯福路4段85號B1 (B1,No.85, Sec. 4, Roosevelt Rd., Zhongzheng Dist., Taipei City 100, Taiwan R.O.C.)
六、 主辦單位Organized Institutions:
國家中山科學研究院、台灣經濟研究院
National Chung-Shan Institute of Science & Technology、Taiwan Institute of Economic Research
七、 會議連絡人Contact:
台灣經濟研究院 Taiwan Institute of Economic Research
黃韻靜 Abby Huang  phone: +886-2-2586-5000 ext. 923   e-mail: d32881@tier.org.tw
李宜軒 Shain Lee    phone: +886-2-2586-5000 ext. 941   e-mail: d32955@tier.org.tw
address:10461台北市德惠街16-8號7樓 (7F., No. 16-8, Dehuei St., Jhongshan District, Taipei City 10461, Taiwan)
八、 交通方式Transportation:https://www.meeting.com.tw/index.php/contact-us/798-contact-ntu


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